Sulfur hexafluoride - Wikipedia

The concentration of SF 6 in Earthtroposphere reached 10 parts per trillion (ppt) in year 2019, rising at 0.35 ppt/year. The increase over the prior 40 years was driven in large part by the expanding electric power sector, including fugitive emissions from banks of SF 6 gas contained in its medium- and high-voltage switchgear. Uses inGet price

Sulfur hexafluoride | F6S - PubChem

Sulfur Hexafluoride is a contrast agent composed of an inorganic fluorinated inert gas comprised of six fluoride atoms bound to one sulfur atom, with potential diagnostic activity upon imaging. Upon inhalation of sulfur hexafluoride (Sulfr hexafluoride), the gas is distributed throughout the lungs.Get price

High pressure investigations of positive ion/molecule

Jul 31, 1996 · The essential purpose of this paper is to examine the mechanisms by which positive ions are formed in SF 6 and in mixtures of SF 6 and argon. Relative values of the ion currents have been determind as a function of gas pressure in the ion source, and of the concentration of SF 6 in the gaseous mixture with argon. Measurements were performed byGet price


¾Pressure () P mT Pressure an ion is almost always neutralized during a collision with a surface SF 6 SiF 4, SiCl 4, SiCl 2 SiO 2, SiN x CF 4, C 4 F 8, CHFGet price

Effect of SF 6 flow rate on the etched surface profile and

3.1.1. Effect of sf6 gas flow rate on the side wall profile (opening/closing profile) Effect of SF 6 flow rate on the etched shape profile of the trenches is clearly shown in Fig. 2. Fig. 2a shows negative (opening) profile (profile angle ~92°) of a trench that is etched at SF 6 flow rate of 400 sccm.Get price

Negative ion Time Projection Chamber operation with SF$_{6

Oct 05, 2017 · We present measurements of drift velocities and mobilities of some innovative negative ion gas mixtures at nearly atmospheric pressure based on SF$_{6}$ as electronegative capture agent and of pure SF$_{6}$ at various pressures, performed with the NITEC detector. NITEC is a Time Projection Chamber with 5 cm drift distance readout by a GEMPix, a triple thin GEMs coupled to a Quad-Timepix chipGet price

Behaviors of electron and negative-ion densities in low

Mar 22, 2002 · For instance, in the case of SF 6 (10%)/Ar plasma k a(eff) is ∼1.6×10 −9 cm 3 /s, and thus k a (eff) /k r ∼10 −2 if we assume a typical ion–ion recombination rate coefficient of 10 −7 cm 3 /s. Thus, the result is consistent with Fig. 2, where SF 6 data points are close to the curve with k a /k r =10 −2.Get price

Pressure transmitter - IS-3 - WIKA Romania

The pressure transmitters of the IS-3 series have been specifically designed for the highest industrial requirements in hazardous areas and feature the common approvals, such as ATEX, IECEx, FM and CSA, as well as a SIL rating per IEC 61508 / IEC 61511 for use in the process industry.Get price

Ion Iliescu - Wikipedia

Ion Iliescu is a Romanian politician and engineer who served as President of Romania from 1989 to 1996 and from 2000 until 2004. Between 1996 and 2000 and also from 2004 to 2008, year in which he retired, Iliescu was a senator for the Social Democratic Party, of which he is the founder and honorary president. He joined the Communist Party in 1953 and became a member of its Central Committee in 1965. However, beginning with 1971, he was gradually marginalized by Nicolae Ceaușescu. He had aGet price

Disease threat row over imported Romanian dogs - BBC News

Oct 13, 2019 · Loren Ion, vice-mayor of Oravita in Caras-Severin County, the third largest county in Romania, said a solution had to be found. "There is a huge pressure and people actually make complaints allGet price

Etch rates for micromachining processing-part II

vapor, oxygen plasma, two deep reactive ion etch recipes with two different types of wafer clamping, Sulfr hexafluoride plasma, Sulfr hexafluoride + O2 plasma, CF4 plasma, CF4 + O2 plasma, and argon ion milling. The etch rates of 620 combinations of these were measured. The etch rates of thermal oxide in different dilutions of HF and BHF are also reported.Get price

Etching of high aspect ratio structures in Si using SF 6/O 2

The influence of SF 6-to-O 2 gas ratio, pressure, and rf-bias voltage on the etch rate and selectivity was also analyzed using Si wafers, which were patterned with 0.35-0.5 μm diameter holes in a SiO 2 mask. The etch rate and anisotropy were determined using the F-to-ion flux ratio and F-to-O flux ratio.Get price

Pressure sensor with IO-Link - A-1200 - WIKA Romania

The model A-1200 is a pressure sensor without display that can be flexibly programmed via IO-Link and used in a variety of ways − whether for pressure monitoring or as an electronic PNP/NPN switch for process control.Get price

Dry Etching Overview - University of Utah

ion energy and ion density separately Deep Reactive Ion Etch BOSCH Patent STS, Alcatel, Trion, Oxford Instruments … Uses high density plasma to alternatively etch silicon and deposit a etch-resistant polymer on side walls Polymer deposition Silicon etch using Sulfr hexafluoride chemistry Polymer Unconstrained geometry 90° side walls High aspect ratio 1:30Get price

gaz sf6 Equipment | Environmental XPRT

3-393-R001 - gaz sf6 gas refi lling device for high voltage: Portable with rubber hose and couplings DN8 and DN20, Pressure range 0 up to 10 bar. 3-393-R002 - sf 6 gas refi lling device for high voltage: Portable in a case with rubber hose and couplings DN8 and DN20, Pressure range 0 up to 10 bar. 3-393-R115 - Sulfr hexafluoride...Get price

BAC One-Eleven - Wikipedia

The BAC One-Eleven (or BAC-111/BAC 1-11) was an early jet airliner produced by the British Aircraft Corporation (BAC). Originally conceived by Hunting Aircraft as a 30-seat jet, before its merger into BAC in 1960, it was launched as an 80-seat airliner with a British United Airways order on 9 May 1961.Get price

Ion Ioanid - Wikipedia

Ion Ioanid (28 March 1926 – 12 October 2003) was a Romanian dissident and writer. Ioanid was a political prisoner of the communist-led regime after the Second World War and spent 12 years in prison and labour camps .Get price

Advances in Mechanical Engineering 2017, Vol. 9(12) 1–19

Mar 28, 2017 · and SF 6 gas during the etching period. During etching, SF 6/O 2 gas is excited and turned into ions by the RF coil, and then the ions are accelerated to bombard the passivation layer at the bottom. The polymer materials at the bottom are removed by this ion bombardment, and the silicon is etched by the chemicals reacting with the F ions.Get price

Socialist Republic of Romania - Wikipedia

Soviet Occupation and Rise of The CommunistsRomanian PeopleRepublicThe Ceaușescu GovernmentDownfallWhen King Michael, supported by the main political parties, overthrew Ion Antonescu in August 1944, breaking Romania away from the Axis and bringing it over to the Allied side, Michael could do nothing to erase the memory of his countryrecent active participation in the German invasion of the Soviet Union. Romanian forces fought under Soviet command, driving through Northern Transylvania into Hungary proper, and on into Czechoslovakia and Austria. However, the Soviets treated Romania as a conquered territory, and Soviet troops continued to occupy the country on the basis of the Romanians having been active Nazi allies with a fascist government until very recently.[citation needed] The Yalta Conference had granted the Soviet Union a predominant interest in Romania, the Paris Peace Treaties did not acknowledge Romania as an allied co-belligerent, as the Romanian army had fought hard against the Soviets for the better part of the war, changing sides only when the tides started to tu...Get price

Phys. Rev. E 76, 035401(R) (2007) - Electron attachment to

Sep 14, 2007 · Negative ion formation is observed by Langmuir probe measurements of the reduction in electron density as electrons attach to C 7 F 14 to form C 7 F 14 − or to SF 6 to produce SF 6 −. In C 7 F 14 at a pressure ∼ 3 × 10 − 5 Torr, a nearly electron-free plasma is formed with a residual electron-to-ion density ratio n e ∕ n + < 10 − 4.Get price

Effects of Lycium barbarum L. Polysaccharides on Inflammation

Jan 22, 2020 · (4)Department of Hematology, Institute of Oncology "Prof. dr. Ion Chiricuță", 400015 Cluj-Napoca, Romania. (5)Department of Physiology, Faculty of Medicine, "Iuliu Hațieganu" University of Medicine and Pharmacy, 400012 Cluj-Napoca, Romania.Get price

Ion-Molecule Reactions and Chemical Composition of Emanated

Jun 20, 2008 · The paper presents a chemical composition analysis of the gases emanated from geothermal sources in the Herculane Spa area (Romania). The upper homologues of methane have been identified in these gases. An ion-molecule reaction mechanism could be implicated in the formation of the upper homologues of methane.Get price

Dry Etching Techniques - Penn State PHP Service - Home

Deep Reactive Ion EtchingDeep Reactive Ion Etching Sequential Deposition of a Polymer Layer using Octofluorocyclobutane (C 4 F 8) – a cyclic fluorocarbon that breaks open to form CF 2 and longer chain radicals And Etching of Silicon using Sulphur Hexafluoride (SFEtching of Silicon using Sulphur Hexafluoride (SF 6).Get price


COUNTRY PROFILE: ROMANIA December 2006 Click to Enlarge Image COUNTRY Formal Name: Romania. Short Form: Romania. Term for Citizen(s): Romanian(s). Capital: Bucharest (Bucureşti). Major Cities: As of 2003, Bucharest is the largest city in Romania, with 1.93 million inhabitants.Get price

Trafag AG - Your specialist for sensors

Trafag is your specialist for highly precise and robust pressure transmitters, sensors, pressure switches, thermostats and sf6 gas density monitoring.Get price

Gay in Romania: Legal status and lived experience.

Dec 10, 2014 · Romania’s relations with the West and pressure to introduce anti-discrimination legislation came into play. the Romanian Orthodox Church “is the most trusted institution in Romania,” IonGet price

sf 6 gas in medium-voltage switchgear | TD Guardian Articles

May 01, 2013 · As the experience with Sulfr hexafluoride in high-voltage circuit breakers grew, the manufacturers introduced "single-pressure" designs and improved sealing techniques, greatly reducing the leakage rate. According to a study conducted by CAPIEL, todayhigh-voltage Sulfr hexafluoride circuit breakers have leakage rates below .1% per year.Get price

First World - WhoWho - Ion IC Bratianu

WhoWho - Ion IC Bratianu Ion IC Bratianu (1864-1927), born on 20 August 1864 in Florica in Romania, was six times prime minister of Romania - 1909, 1910-11, 1914-18, 1918-19, 1922-26, 1927 - and succeeded his father (of the same name) as leader of the Liberal party.Get price

Negative Ion Time Projection Chamber operation with Sulfr hexafluoride at

Apr 27, 2018 · Above all, our results with the mixture He:CF 4:SF 6 360:240:10 Torr demonstrate for the first time the feasibility of SF 6 − negative ion drift and gas gain in He at nearly atmospheric pressure, opening very interesting prospects for the next generation of directional Dark Matter detectors.Get price